Power MOSFET device structure for high frequency a

专利名称：Power MOSFET device structure for high

frequency applications

发明人：Anup Bhalla,Daniel Ng,Tiesheng Li,Sik K. Lui申请号：US12658450申请日：20100209公开号：US08163618B2公开日：20120424

专利附图：

摘要：This invention discloses a new switching device supported on a semiconductorthat includes a drain disposed on a first surface and a source region disposed near asecond surface of said semiconductor opposite the first surface. The switching device

further includes an insulated gate electrode disposed on top of the second surface forcontrolling a source to drain current. The switching device further includes a sourceelectrode interposed into the insulated gate electrode for substantially preventing acoupling of an electrical field between the gate electrode and an epitaxial regionunderneath the insulated gate electrode. The source electrode further covers andextends over the insulated gate for covering an area on the second surface of thesemiconductor to contact the source region. The semiconductor substrate furtherincludes an epitaxial layer disposed above and having a different dopant concentrationthan the drain region. The insulated gate electrode further includes an insulation layerfor insulating the gate electrode from the source electrode wherein the insulation layerhaving a thickness depending on a Vgsmax rating of the vertical power device.

申请人：Anup Bhalla,Daniel Ng,Tiesheng Li,Sik K. Lui

地址：Santa Clara CA US,Campbell CA US,San Jose CA US,Sunnyvale CA US

国籍：US,US,US,US

代理人：Bo-In Lin

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