元器件交易网www.cecb2b.com TC237680- × 500-PIXEL CCD IMAGE SENSOR SOCS044B – JUNE 1994 – REVISED JUNE 1996DVery High-Resolution, 1/3-in Solid-StateDDDDDDDD DImage Sensor for NTSC Black and WhiteApplications340,000 Pixels per FieldFrame Memory658 (H) × 496 (V) Active Elements in ImageSensing Area Compatible With ElectronicCenterinMultimode Readout Capability– Progressive Scan– Interlaced Scan– Dual-Line Readout– Image-Area Line Summing– Smear SubtractionFast Single-Pulse Clear CapabilityContinuous Electronic Exposure ControlFrom 1/60 – 1/50,000 s7.4-µm Square PixelsAdvanced Lateral-Overflow-DrainAntibloomingLow Dark CurrentDUAL-IN-LINE PACKAGE(TOP VIEW)ODB 1IAG2 2SUB 3ADB 4OUT1 5OUT2 612 IAG111 SAG10 SAG9 SUB8 SRG7 RSTDDDDHigh Dynamic RangeHigh SensitivityHigh Blue ResponseSolid-State Reliability With No ImageBurn-In, Residual Imaging, ImageDistortion, Image Lag, orMicrophonicsdescriptionThe TC237 is a frame-transfer, charge-coupled device (CCD) image sensor designed for use in single-chipblack and white NTSC TV, computer, and special-purpose applications requiring low cost and small size.The image-sensing area of the TC237 is configured into 500 lines with 680 elements in each line. Twenty-twoelements are provided in each line for dark reference. The blooming-protection feature of the sensor is basedon an advanced lateral-overflow-drain concept. The sensor can be operated in a true-interlace mode as a658(H) × 496(V) sensor with a very low dark current. One important feature of the TC237 very high-resolutionsensor is the ability to capture a full 340,000 pixels per field. The image sensor also provides high-speed image-transfer capability. This capability allows for a continuous electronic exposure control without the loss ofsensitivity and resolution inherent in other technologies. The charge is converted to signal voltage at 20 µV perelectron by a high-performance structure with a reset and a voltage-reference generator. The signal is furtherbuffered by a low-noise, two-stage, source-follower amplifier to provide high output-drive capability.The TC237 is built using TI-proprietary advanced virtual-phase (AVP) technology, which provides devices withhigh blue response, low dark signal, good uniformity, and single-phase clocking. The TC237 is characterizedfor operation from –10°C to 45°C.This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted togetheror the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to VSS. Under nocircumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to VSS during operation to preventdamage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current isallowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for HandlingElectrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.PRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.Copyright © 1996, Texas Instruments IncorporatedPOST OFFICE BOX 655303 DALLAS, TEXAS 75265• 1元器件交易网www.cecb2b.comSOCS044B – JUNE 1994 – REVISED JUNE 1996TC237680- × 500-PIXEL CCD IMAGE SENSOR functional block diagramSUB3 ODB1Image Area WithBlooming Protection2Dark Reference Elements11SAG12IAG1IAG2Storage AreaADBOUT24 Dummy ElementsOUT15Amplifiers1098SAGSUBSRG7RSTClearing Drainsensor topology diagram22 Dark Reference Pixels658 Active Pixels496 LinesTwo-Phase Image-Sensing Area4 Dark Lines500 LinesSingle-Phase Storage Area4Dummy Pixels422Optical Black(OPB)22658 Active Pixels658 Active Pixels 2POST OFFICE BOX 655303 DALLAS, TEXAS 75265•元器件交易网www.cecb2b.com TC237680- × 500-PIXEL CCD IMAGE SENSOR SOCS044B – JUNE 1994 – REVISED JUNE 1996Terminal FunctionsTERMINALNAMEADBIAG1IAG2ODBOUT1OUT2RSTSAGSRGSUBNO.4122156710, 1183, 9I/OIIIIOOIIISupply voltage for amplifier-drain biasImage-area gate 1Image-area gate 2Supply voltage overflow-drain antiblooming biasOutput signal 1Output signal 2Reset gateStorage-area gateSerial-register gateSubstrateDESCRIPTIONdetailed descriptionThe TC237 consists of four basic functional blocks: the image-sensing area, the image-storage area, the serialregister gates, and the low-noise signal processing amplifier block with charge-detection nodes andindependent resets. The location of each of these blocks is identified in the functional block diagram.image-sensing and storage areasFigure 1 and Figure 2 show cross sections with potential-well diagrams and top views of the image-sensing andstorage-area elements. As light enters the silicon in the image-sensing area, free electrons are generated andcollected in the wells of the sensing elements. Blooming protection is provided by applying a dc bias to theoverflow-drain bias pin. If it is necessary to clear the image before beginning a new integration time (forimplementation of electronic fixed shutter or electronic auto-iris), it is possible to do so by applying a pulse atleast 1 µs in duration to the overflow-drain bias. After integration is complete, the charge is transferred into thestorage area; the transfer timing is dependent on whether the readout mode is interlace or progressive scan.If the progressive-scan readout mode is selected, the readout may be performed normally by utilizing one serialregister or high speed by using both serial registers (see Figure 3 through Figure 5). A line-summing operation(which is useful in off-chip smear subtraction) may be implemented before the parallel transfer (see Figure 6for line-summing timing).There are 22 columns at the left edge of the image-sensing area that are shielded from incident light; theseelements provide the dark reference used in subsequent video-processing circuits to restore the video blacklevel. There are also four dark lines between the image-sensing and the image-storage area that prevent chargeleakage from the image-sensing area into the image-storage area.POST OFFICE BOX 655303 DALLAS, TEXAS 75265• 3元器件交易网www.cecb2b.comSOCS044B – JUNE 1994 – REVISED JUNE 1996TC237680- × 500-PIXEL CCD IMAGE SENSOR 7.4 µm Clocked Barrier3.8 µmClocked WellVirtual Barrier3.6 µmAntibloomingDeviceVirtual WellChannel StopsIncluding Metal Bus Lines1.6 µm1.6 µmClocked GateFigure 1. Image-Area Pixel Structure7.4 µmClocked Barrier3.5 µmClocked WellVirtual Barrier3.5 µmVirtual WellChannel StopsIncluding Metal Bus Lines1.6 µm1.6 µmClocked GateFigure 2. Storage-Area Pixel Structure 4POST OFFICE BOX 655303 DALLAS, TEXAS 75265•元器件交易网www.cecb2b.com TC237680- × 500-PIXEL CCD IMAGE SENSOR SOCS044B – JUNE 1994 – REVISED JUNE 1996ClearIntegrateTransfer to MemoryReadout1 µs MinimumODB†IAG1, 2†SAG‡684 Pulses250 Cycles†SRG684 PulsesRSTExpanded Section ofParallel TransferIAG1, 2SAGSRGFigure 3. Interlace Timing†The number of parallel transfer pulses is field dependent. Field 1 has 500 pulses of IAG1, IAG2, SAG, and SRG with appropriate phasing. Field2has 501 pulses.‡The readout is from register 2.POST OFFICE BOX 655303 DALLAS, TEXAS 75265• 5元器件交易网www.cecb2b.comSOCS044B – JUNE 1994 – REVISED JUNE 1996TC237680- × 500-PIXEL CCD IMAGE SENSOR ClearIntegrateTransfer to MemoryReadout 1 µs MinimumODB500 PulsesIAG1, 2500 PulsesSAG500 PulsesSRG684 PulsesRSTExpanded Section ofParallel Transfer684 Pulses†500 CyclesIAG1, 2SAGSRG†The readout will be from register 2.Figure 4. Progressive-Scan Timing With Single Register Readout 6POST OFFICE BOX 655303 DALLAS, TEXAS 75265•元器件交易网www.cecb2b.com TC237680- × 500-PIXEL CCD IMAGE SENSOR SOCS044B – JUNE 1994 – REVISED JUNE 1996ClearIntegrateTransfer to MemoryReadout1 µs MinimumODB500 PulsesIAG1, 2500 PulsesSAG500 PulsesSRG684 PulsesRSTExpanded Section ofParallel Transfer684 Pulses250 CyclesIAG1, 2SAGSRGFigure 5. Progressive-Scan Timing With Dual Register ReadoutPOST OFFICE BOX 655303 DALLAS, TEXAS 75265• 7元器件交易网www.cecb2b.comSOCS044B – JUNE 1994 – REVISED JUNE 1996TC237680- × 500-PIXEL CCD IMAGE SENSOR ClearIntegrateLineSumTransfer to MemoryReadout 1 µs MinimumODB†IAG1‡IAG2¶SAG¶SRG684 PulsesRSTExpanded Section ofParallel Transfer§684 Pulses250 Cycles¶¶IAG1, 2SAGSRGFigure 6. Line-Summing Timing†This pulse occurs only during field 1.‡This pulse occurs only during field 2.§While readout is from register 2, register 1 can be read out for off-chip smear subtraction.¶The number of parallel transfer pulses if field dependent. field 1 has 500 pulses and field 2 has 501 pulses. 8POST OFFICE BOX 655303 DALLAS, TEXAS 75265•元器件交易网www.cecb2b.com TC237680- × 500-PIXEL CCD IMAGE SENSOR SOCS044B – JUNE 1994 – REVISED JUNE 1996serial registersThe storage-area gate and serial gate(s) are used to transfer the charge line by line from the storage area intothe serial register(s). Depending on the readout mode, one or both serial registers is used. If both are used, theregisters are read out in parallel.readout and video processingAfter transfer into the serial register(s), the pixels are clocked out and sensed by a charge-detection node. Thenode must be reset to a reference level before the next pixel is placed onto the detection node. The timing forthe serial-register readout, which includes the external pixel clamp and sample-and-hold signals needed toimplement correlated double sampling, is shown in Figure 7. As the charge is transferred onto the detectionnode, the potential of this node changes in proportion to the amount of signal received. The change is sensedby an MOS transistor and, after proper buffering, the signal is supplied to the output terminal of the image sensor.The buffer amplifier converts charge into a video signal. Figure 8 shows the circuit diagram of thecharge-detection node and output amplifier. The detection nodes and amplifiers are placed a short distanceaway from the edge of the storage area; therefore, each serial register contains 4 dummy elements that are usedto span the distance between the serial registers and the amplifiers.SRGRSTOUTS/HPCMPFigure 7. Serial-Readout and Video-Processing TimingVREFQRResetCCD ChannelQ1Q2ADBVOUTFigure 8. Output Amplifier and Charge-Detection NodePOST OFFICE BOX 655303 DALLAS, TEXAS 75265• 9元器件交易网www.cecb2b.comSOCS044B – JUNE 1994 – REVISED JUNE 1996TC237680- × 500-PIXEL CCD IMAGE SENSOR absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage range, ADB (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SUB to SUB + 15 VSupply voltage range, ODB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SUB to SUB + 21 VInput voltage range for ABG, IAG1, IAG2, SAG, SRG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 15 VOperating free-air temperature range, TA –10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . °C to 45°CStorage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30°C to 85°COperating case temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10°C to 55°C†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.NOTE 1:All voltage values are with respect to substrate terminal.recommended operating conditionsMINSupply voltage for amplifier drain bias, ADBSupplyvoltageforoverflowdrainantibloomingbiasODBSupply voltage for overflow-drain antiblooming bias, ODBSubstrate bias voltageIAG1IAG2IAG1, IAG2InputvoltageVIInput voltage, VSAGSRGRSTSRG, RSTIAG1, IAG2Clock frequency, fclockCapacitive loadOperating free-air temperature, TASAGSRG, RSTOUT1, OUT2–10High levelLow levelHigh levelLow levelHigh levelLow level11.511.511.5For antiblooming controlFor clearing211425NOM22162610120120120252512.55pF°CMHz12.512.5V12.5MAX231727UNITVVV 10POST OFFICE BOX 655303 DALLAS, TEXAS 75265•元器件交易网www.cecb2b.com TC237680- × 500-PIXEL CCD IMAGE SENSOR SOCS044B – JUNE 1994 – REVISED JUNE 1996electrical characteristics over recommended operating range of supply voltage,TA = –10°C to 45°CPARAMETERDynamicrange(seeNote2)Dynamic range (see Note 2)Charge conversion factorCharge-transfer efficiency (see Note 3)Signal-response delay time, τ (see Note 4)Gamma (see Note 5)Output resistanceNoiseequivalentsignalNoise-equivalent signalWith CDS‡Without CDS‡ADB (see Note 6)Rejection ratioSupply currentIAG1, IAG2InputcapacitanceCiInput capacitance, CSRGRSTSAGSRG (see Note 7)ABG (see Note 8)3008.5304001036TBDTBDTBD5200070104000pF10mAdB0.9999With CDS‡Without CDS‡MINTYP†6958200.99995TBD15001242Ωelectrons1nsMAX7059UNITdBµV/e†All typical values are at TA = 25°C.‡CDS = Correlated double sampling, a signal-processing technique that improves noise performance by subtraction of reset noise.NOTES:2.Dynamic range is –20 times the logarithm of the mean noise signal divided by saturation output signal.3.Charge-transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark usingan electrical input signal.4.Signal-response delay time is the time between the falling edge of the SRG pulse and the output-signal valid state.5.Gamma (γ) is the value of the exponent in the equation below for two points on the linear portion of the transfer-function curve (thisvalue represents points near saturation).gExposure(2)Outputsignal(2)+Exposure(1)Outputsignal(1)ǒǓǒǓ6.ADB rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ADB.7.SRG rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRG.8.ABG rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG.POST OFFICE BOX 655303 DALLAS, TEXAS 75265• 11元器件交易网www.cecb2b.comSOCS044B – JUNE 1994 – REVISED JUNE 1996TC237680- × 500-PIXEL CCD IMAGE SENSOR optical characteristics, TA = 40°C, integration time = 16.67 ms (unless otherwise noted)PARAMETERSensitivity(seeNote9)Sensitivity (see Note 9)Saturation signal, Vsat (see Note 10)Maximum usable signal, VuseBlooming overload ratio (see Note 11)Image-area well capacitySmear (see Note 12)Dark currentDark signalDark-signal uniformityDark-signal shadingSpuriousnonuniformitySpurious nonuniformityColumn uniformityElectronic-shutter capability1/50,0001/60DarkIlluminated, F#8See Note 13TA = 21°CTA = 45°CTA = 45°CTA = 45°CTA = 45°CTA = 45°CNo IR filterWith IR filterAntiblooming disabledAntiblooming enabled22KMINTYP25632390180100030K38K–780.0510.50.510150.5electronsdBnA/cm2mVmVmVmV%mVsMAXUNITmV/luxmVmV NOTES:9.Theoretical value10.Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.11.Blooming is the condition in which charge is induced in an element by light incident on another element. Blooming overload ratiois the ratio of blooming exposure to saturation exposure.12.Smear is a measure of the error introduced by transferring charge through an illuminated pixel in shutterless operation. It isequivalent to the ratio of the single-pixel transfer time to the exposure time using an illuminated section that is 1/10 of the image-areavertical height with recommended clock frequencies.13.The exposure time is 16.67 ms, the fast-dump clocking rate during vertical transfer is 12.5 MHz, and the illuminated section is 1/10the height of the image section.TYPICAL CHARACTERISTICS0.50Quantum Efficiency16141210820300400500600700800900100011000.40Responsivity – A/W0.300.200.10.9.8.7.6.5.4.3.2.10.00Wavelength (nm)Figure 9. Spectral Characteristics of the TC237 CCD Sensor 12POST OFFICE BOX 655303 DALLAS, TEXAS 75265•Sensitivity – V/µJ/cm2元器件交易网www.cecb2b.com TC237680- × 500-PIXEL CCD IMAGE SENSOR SOCS044B – JUNE 1994 – REVISED JUNE 1996VS0.1TMC57253DSBVCCOscillator17GNDVCCGNDCLK148VCC0.1User-DefinedTimerVCC1VAB2VCC3GND4EN5ABIN6ABMIN7IA1IN8IA2IN9SAIN10SRIN11SRMIN12GNDVABMABOUTVABLGNDIA1OUTVIIA2OUTGNDSAOUTVSSROUTVSM0.1242322212019181716151413VSUB15 VTC237VS1ODB2IAG23SUB4ADB5OUT16OUT2IAG1SAGSAGSUBSRGRST121110987121CLKINVCC112RSTPCMP103IA1CLAMP94IA2S/H85SACLEAR†76SRGNDVODB10 k+150.133+VADB15+33+100ADB0.11 kVODB2N390410 k2N390422 pF15+CLR‡VADB10 k0.12N3904OUT11 k15+10 k2N390422 pFDC VOLTAGESVSVCCVSUBVADBVODB12 V5 V10 V22 V22 V1000.12N3904OUT21 kAll values are in Ω and µF unless otherwise noted.†CLEAR is active-low TTL.‡CLR is nominally 18 VDC with a 10-V pulse for image clear.Figure 10. Typical Application Circuit DiagramSUPPORT CIRCUITDEVICETMC57253DSBPACKAGE24-pin surfaceAPPLICATIONDriverFUNCTIONDriver for IAG1, 2, SAG, SRG, and RSTPOST OFFICE BOX 655303 DALLAS, TEXAS 75265• 13元器件交易网www.cecb2b.comSOCS044B – JUNE 1994 – REVISED JUNE 1996TC237680- × 500-PIXEL CCD IMAGE SENSOR MECHANICAL DATA The package for the TC237 consists of a ceramic base, a glass window, and a 12-lead frame. The glass window issealed to the package by an epoxy adhesive. The package leads are configured in a dual-in-line organization andfit into mounting holes with 1,78 mm center-to-center spacings.TC237 (12 pin)IndexMark5,995,591,911,6,504,10OpticalCenter12,4012,0011,7011,50PackageCenter11,5011,101,780,760,510,410,503,9010,9010,703,2982,798Focus Plane2,081,480,330,173,9983,39811,6811,18ALL LINEAR DIMENSIONS ARE IN MILLIMETERS04/95 14POST OFFICE BOX 655303 DALLAS, TEXAS 75265•元器件交易网www.cecb2b.com
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