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QUANTUM DOT COMPOSITE MATERIAL AND MANUFACTURING M

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专利名称：QUANTUM DOT COMPOSITE MATERIAL

AND MANUFACTURING METHOD ANDAPPLICATION THEREOF

发明人：Hung-Chia Wang,Xue-Jie Zhang,Shin-Ying

Lin,An-Cih Tang,Ru-Shi Liu,Tzong-LiangTsai,Yu-Chun Lee,Ching-Yi Chen,Hung-ChunTong

申请号：US15362120申请日：20161128

公开号：US20170153382A1公开日：20170601

专利附图：

摘要：A quantum dot composite material and a manufacturing method and anapplication thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has achemical formula of CsPb(ClBrI), wherein 0≦a≦1, 0≦b≦1.

申请人：Lextar Electronics Corporation

地址：Hsinchu TW

国籍：TW

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