Multi-level cell NOR flash memory device

专利名称：Multi-level cell NOR flash memory device发明人：Sheng-Da Liu,Yider Wu申请号：US12976284申请日：20101222公开号：US08325518B2公开日：20121204

专利附图：

摘要：A multi-level cell NOR flash memory device includes a plurality of gate lines, aplurality of source regions, a plurality of drain regions, a plurality of source lines, aplurality of bitlines, and a plurality of power lines. The bitlines each have a specific sheetresistance. A specific number of the bitlines are disposed between two adjacent ones of

the power lines. Accordingly, the multi-level cell NOR flash memory device is of a hightransconductance and uniformity and thereby features an enhanced conforming rate.

申请人：Sheng-Da Liu,Yider Wu

地址：Chu-Pei TW,Chu-Pei TW

国籍：TW,TW

代理机构：Schmeiser, Olsen & Watts, LLP

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